TLP291 consists of photo transistor, optically coupled to a gallium arsenide infrared emitting diode. TLP291 is housed in the SO4 package, very small and thin coupler.
Since TLP291 is guaranteed wide operating temperature (Ta=-55 to 110 ˚C) and high isolation voltage (3750Vrms), it’s suitable for high-density surface mounting applications such as small switching power supplies and programmable controllers.
● Collector-Emitter Voltage : 80 V (min)
● Current Transfer Ratio : 50% (min)
Rank GB : 100% (min)
● Isolation Voltage : 3750 Vrms (min)
● Operation temperature: -55 to 110 ˚C
● UL recognized : UL1577, File No. E67349
● cUL approved : CSA Component Acceptance Service No.5A,
File No. 67349
● SEMKO aprroved: EN 60065: 2002, Approved no. 1200315
EN 60950-1: 2001, EN 60335-1: 2002,
Approved no. 1200315
● BSI approved : BS EN 60065: 2002, Approved no. 9036
: BS EN 60950-1: 2006, Approved no. 9037
● Option (V4)
VDE approved: EN 60747-5-5 Certificate, No. 40009347
Maximum operating insulation voltage: 707 Vpk
Highest permissible over-voltage: 6000 Vpk
(Note) When a EN 60747-5-5 approved type is needed, please designate the “Option(V4)”
Construction Mechanical Rating
Creepage distance:5.0mm(min)
Clearance:5.0mm(min)
Insultion thickness:0.4mm(min)
北亿纤通专业研发生产并完美替换：TLP291,TLP291光藕,TOSHIBA TLP291,东芝TLP291,TOSHIBA东芝 TLP291光藕.100%完美兼容TOSHIBA东芝 TLP291光藕.我们的产品海量交付给华为、中兴、国防、军工、航空、航天、兵器、舰船、雷达、电子、工业、核工业、核武器、军事、电力、铁路、医疗、交通、通信、电信、移动、联通、政府、国防科技等大专院校及科研院所
Important Notice
Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.
The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.