The FT-CNY17, FT-4NXX series of devices each consist of an infrared emitting diode optically coupled to a phototransistor.They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option.
晶体管输出光耦
The FT-20X and FT-21X series contain an infrared emitting diode optically coupled to a phototransistor detector. The FT-D20X and FT-D21X series contain two infrared emitting diodes optically coupled to two phototransistor detectors.
The FT-827 series devices each of consist of an infrared emitting diodes, optically coupled to a phototransistor detector.They are packaged in a 8-pin DIP package and available in wide-lead spacing and SMD option.
The FT-101X-G series devices consist of an infrared emittingdiode , optically coupled to a phototransistor detector. Compound use free halogens and Sb2O3. They are packaged in a 4 pin SOP package
The FT-847 series devices each of consist of an infrared emitting diodes, optically coupled to a phototransistor detector, and provides four isolated channels. They are packaged in a 16-pin DIP package and available in SMD option.
The FT-111X-G series devices consist of an infrared emittingdiode , optically coupled to a phototransistor detector. Compound use free halogens and Sb2O3. They are packaged in a 5 pin SOP package
The FT-CNY64 and FT-CNY65 series contains an infrared emitting diode optically coupled to a phototransistor. These devices are packaged in an 4-pin DIP package and providing a distance between input and output for highest safety requirement of >3mm.
The FT-814 series of devices each con s ist of two infrared emitting diodes , connected in inverse parallel, optically coupled to a phototransistor detector. They are packaged in a 4 pin DIP package and available in s ide lead spacing and SMD option.
The FT-3H4-G series contains two infrared emitting diode, connected in inverse parallel, optically coupled to a phototransistor encapsulated with green compound.It is packaged in a 4-pin small outline SMD package
The FT-81X series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector.They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.
The FT-3H7-G series devices consist of an infrared emitting diode, optically coupled to a phototransistor detector encapsulated with green compound. They are packaged in a 4-pin small outline SMD package.
The FT-H11AAX series of devices each consist of two infrared emitting diode, connected in inverse parallel, optically coupled to a phototransistor detector.They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option.
FT-Q3H4 is optically coupled isolator containing GaAs light emitting diodes and an NPN silicon phototransistors in a plastic SOP for high density applications.This package has shield effect to cut off ambient light.
应用领域
● 交流线路监控器
● 可编程控制器
● 电话线接口
● 系统设备
● 测量仪器
● 极性未知的直流传感器
FT-Q3H7 contains of an infrared emitting diode optically coupled to a phototransistor detector encapsulated with green compound.FT-Q3H7 offers 4 channels in a 16-pin small outline SMD package.
应用领域
● 交流线路监控器
● 可编程控制器
● 电话线接口
● 系统设备
● 测量仪器
● 极性未知的直流传感器
The FT-354N-G series of devices each consist of two infrared emitting diode, connected in inverse parallel, optically coupled to a photo transistor detector..They are packaged in a 4-pin small outline package.
The FT-357N-G series contains an infrared emitting diode, optically coupled to a phototransistor detector. The devices in a 4-pin small outline SMD package.