The FT-W3120 consists of an infrared light emitting diodes and integrated high gain, high-speed photo detectors. The device is housed in an 8 pin DIP wide body package and available in SMD package option.
The photo detector has an internal shield that provides a guaranteed common-mode transient immunity of ±20 kV/μs. It is suitable for direct gate driving circuit for IGBTs or power MOSFETs.
Features
● Peak Output Current : IOP = 2.5A (max)
● Guaranteed performance from -40 to 110℃
● High isolation voltage between input and output (Viso=5000 V rms.)
Other Applications
● Isolated IGBT/Power MOSFET Gate Drive
● Uninterruptible power supply
● Inverters
● Home appliances such as fan heaters
Important Notice
Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.
The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.