1.Features
High speed 1 Mbit/s
10kV/ps min. common mode transient immunity
Guaranteed performance from -40 to 100°C
Open collector output
High isolation voltage between input and output
Viso=5000 V rms
In compliance with RoHS, REACH standards
MSL Class Ⅰ
2.Instructions
The FT-88-2530 and FT-88-2531 dual channel devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over conventional phototransistor couplers by reducing the base-collector capacitance of the input transistor. The devices are packaged in an 8-pin DIP package and available in wide-lead spacing and SMD option.
Thephotoelectric coupleroperatingtemperaturerange: - 40 ℃ ~ +110 ℃.
3.Application Range
Line receivers
Telecommunication equipments
Power transistor isolation in motor drives
Replacement for low speed phototransistor photo couplers
Feedback loop in switch-mode power supplies
Home appliances
High speed logic ground isolation
Important Notice
Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.
The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.
